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2N7000 MOSFET Transistor

2N7000

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Description

2N7000 Small Signal Mosfet N-Channel Transistor

Packages Available: TO-92

MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage VDSS 60 Vdc
Drain−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
− Continuous
− Pulsed
ID
IDM
200
500
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 350
2.8
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS
Characteristic Symbol  Max Unit
Thermal Resistance, Junction−to−Ambient RJA 357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case for 10 seconds
TL 300 °C
                             
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

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2N7000 MOSFET Transistor

2N7000 MOSFET Transistor